Title :
Characterization of the PbI2 crystal as a material for radiation detectors
Author :
Shoji, T. ; Sakamoto, K. ; Ohba, K. ; Suehiro, T. ; Hiratate, Y.
Author_Institution :
Tohoku Inst. of Technol., Sendai, Japan
fDate :
6/1/1997 12:00:00 AM
Abstract :
We have been studying a radiation detector which uses lead iodide crystal. The growth of PbI2 crystal used the two methods. One is the zone melting method and the other is the vapor phase epitaxy method. The performance of the detector fabricated from a crystal grown by the former method showed better characteristics than the detector fabricated from the crystal grown by the latter. Results of XPS and PL measurements, suggest that the behavior of the iodine atoms in the crystal influenced and controlled the performance of the detector
Keywords :
X-ray photoelectron spectra; lead compounds; photoluminescence; semiconductor counters; vapour phase epitaxial growth; wide band gap semiconductors; zone melting; PbI2; PbI2 crystal; radiation detectors; vapor phase epitaxy method; zone melting method; Art; Atomic layer deposition; Crystalline materials; Electrons; Etching; Lattices; Lead; Photomultipliers; Radiation detectors; Temperature;
Journal_Title :
Nuclear Science, IEEE Transactions on
