• DocumentCode
    1344651
  • Title

    Discrete devices: Fabrication and processing techniques, borrowed from LSI technology, play major roles in new component designs

  • Author

    Fagenbaum, J.

  • Volume
    19
  • Issue
    1
  • fYear
    1982
  • Firstpage
    56
  • Lastpage
    57
  • Abstract
    Describes how materials processing and fabrication techniques, have made possible the production of denser, smaller, and faster components during the past year. Among the components were high-frequency power-switching devices, microwave devices for communications, solid-state relays, and isolation amplifier transformers. Solid-state devices can now handle over 10 million watts. In the laboratory GaAs FETs have moved to even higher frequencies and even lower noise figures. The state of the art is an 8-gigahertz FET fabricated with electron-beam lithography with a 1.1-decibel noise figure and 14-dB associated gain.
  • Keywords
    III-V semiconductors; field effect transistors; gallium arsenide; operational amplifiers; power transistors; reviews; semiconductor relays; semiconductor switches; solid-state microwave devices; transformers; 8 GHz; FET; GaAs; GaAs FETs; communications; discrete devices; fabrication techniques; high frequency power; isolation amplifier transformers; materials processing; microwave devices; solid state relays; switching devices; Microwave amplifiers; Power transformer insulation; Relays; Substrates; Switches; Windings;
  • fLanguage
    English
  • Journal_Title
    Spectrum, IEEE
  • Publisher
    ieee
  • ISSN
    0018-9235
  • Type

    jour

  • DOI
    10.1109/MSPEC.1982.6366762
  • Filename
    6366762