DocumentCode
1344651
Title
Discrete devices: Fabrication and processing techniques, borrowed from LSI technology, play major roles in new component designs
Author
Fagenbaum, J.
Volume
19
Issue
1
fYear
1982
Firstpage
56
Lastpage
57
Abstract
Describes how materials processing and fabrication techniques, have made possible the production of denser, smaller, and faster components during the past year. Among the components were high-frequency power-switching devices, microwave devices for communications, solid-state relays, and isolation amplifier transformers. Solid-state devices can now handle over 10 million watts. In the laboratory GaAs FETs have moved to even higher frequencies and even lower noise figures. The state of the art is an 8-gigahertz FET fabricated with electron-beam lithography with a 1.1-decibel noise figure and 14-dB associated gain.
Keywords
III-V semiconductors; field effect transistors; gallium arsenide; operational amplifiers; power transistors; reviews; semiconductor relays; semiconductor switches; solid-state microwave devices; transformers; 8 GHz; FET; GaAs; GaAs FETs; communications; discrete devices; fabrication techniques; high frequency power; isolation amplifier transformers; materials processing; microwave devices; solid state relays; switching devices; Microwave amplifiers; Power transformer insulation; Relays; Substrates; Switches; Windings;
fLanguage
English
Journal_Title
Spectrum, IEEE
Publisher
ieee
ISSN
0018-9235
Type
jour
DOI
10.1109/MSPEC.1982.6366762
Filename
6366762
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