Title :
Drifting-Dipole Noise (DDN) Model of MOSFETs for Microwave Circuit Design
Author :
Nguyen, Giang D. ; Feng, Milton
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
Abstract :
Physic-based formulations for the high-frequency noise characteristics of nanometer MOSFETs working at saturation are developed. In the derivation, field-dependent mobility, as well as carrier heating effect in the gradual channel approximation region, is taken into account. In addition, diffusion noise due to velocity saturation carriers in the high electric field region is calculated using Statz´s drifting dipole theory. Excellent agreement between the proposed model and experimental noise data for 120-nm MOSFET technology was obtained over device sizes, biases, and frequencies up to 26 GHz. The analytical noise model can be incorporated into any compact model to enable first-pass silicon design of microwave circuit.
Keywords :
MOSFET; approximation theory; field effect MMIC; integrated circuit design; integrated circuit noise; semiconductor device models; DDN model; channel approximation; diffusion noise; drifting-dipole noise model; field-dependent mobility; frequency 26 GHz; high-frequency noise; microwave circuit design; nanometer MOSFET; size 120 nm; velocity saturation carrier; Electric potential; Integrated circuit modeling; Logic gates; MOSFETs; Microwave circuits; Noise; Thermal noise; Carrier heating; drifting dipoles; high-field diffusion noise; nanometer MOSFET; velocity saturation;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2010.2081530
