DocumentCode :
1344757
Title :
Optimized terminal current calculation for Monte Carlo device simulation
Author :
Yoder, P.D. ; Gärtner, K. ; Krumbein, Ulrich ; Fichtner, Wolfgang
Author_Institution :
Integrated Syst. Lab., Fed. Inst. of Technol., Zurich, Switzerland
Volume :
16
Issue :
10
fYear :
1997
fDate :
10/1/1997 12:00:00 AM
Firstpage :
1082
Lastpage :
1087
Abstract :
We present a generalized Ramo-Shockley theorem (GRST) for the calculation of time-dependent terminal currents in multidimensional charge transport calculations and simulations. While analytically equivalent to existing boundary integration methods, this new domain integration technique is less sensitive to numerical error introduced by calculations of finite precision. Most significantly, we derive entirely new optimized formulas for the ensemble Monte Carlo estimation of steady-state terminal currents from the time-independent form of our GRST, which are in general not equivalent to the time-average of the true time-dependent terminal currents. We then demonstrate, both analytically and by means of example, how our new variance-minimizing terminal current estimators may be exploited to improve estimator accuracy in comparison to existing methods
Keywords :
Monte Carlo methods; semiconductor device models; domain integration; ensemble Monte Carlo device simulation; generalized Ramo-Shockley theorem; multidimensional charge transport; numerical error; terminal current estimator; variance minimization; Analysis of variance; Charge carrier processes; Charge carriers; Current density; Doping; Helium; Monte Carlo methods; Multidimensional systems; Region 1; Steady-state;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/43.662672
Filename :
662672
Link To Document :
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