Behavior of silicon drift detectors in large magnetic fields

Author

Pandey, S.U. ; Bellwied, R. ; Beuttenmueller, R. ; Chen, W. ; Cooper, D. ; DiMassimo, D. ; Dou, L. ; Dyke, H. ; Elliot, D. ; French, A. ; Hall, J. ; Hoffmann, G.W. ; Humanic, T.J. ; Kirkman, J. ; Kotov, I.V. ; Kraner, H.W. ; Liaw, C.J. ; Lo Curto, G. ; Ly

Author_Institution

STAR-SVT Collaboration, Ohio State Univ., Columbus, OH, USA

Volume

44

Issue

3

fYear

1997

fDate

6/1/1997 12:00:00 AM

Firstpage

610

Lastpage

614

Abstract

A 45×45 mm rectangular n-type silicon drift detector was studied in magnetic fields ranging from 0 to 4.7 T and for drift fields from 200 to 380 V/cm. Transport properties of electrons in silicon (Hall mobility, drift mobility and magnetoresistance) were determined by pulsing the detector with a Nd:YAG laser at different drift lengths and measuring both the transverse deflections of the signal and the increases in drift time versus applied magnetic field. The width of the signal in both the drift and anode direction increased with magnetic field. The magnetic field was aligned parallel and normal to the the drift direction. The detector was found to operate well for conditions expected in future experiments at the RHIC collider and experiment E896 at Brookhaven National Laboratory

Keywords

Hall mobility; drift chambers; magnetoresistance; silicon radiation detectors; 0 to 4.7 T; 45 mm; Hall mobility; Si; Si drift detectors; drift mobility; large magnetic fields; magnetoresistance; rectangular n-type detector; transverse deflections; Detectors; Electron mobility; Hall effect; Length measurement; Magnetic field measurement; Magnetic fields; Magnetic properties; Magnetoresistance; Silicon; Time measurement;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.603720

Filename

603720