Author :
Unno, Y. ; Nakao, M. ; Fujita, K. ; Ciocio, A. ; Dane, J. ; Dubbs, T. ; Emes, J. ; Gilchriese, M. ; Grillo, A. ; Haber, C. ; Handa, T. ; Holland, S. ; Iwasaki, H. ; Iwata, Y. ; Kashigin, S. ; Kipnis, I. ; Kohriki, T. ; Kondo, T. ; Kroeger, W. ; Lozano-Bah
Abstract :
A large area (60 mm×60 mm) n-bulk and n-strip readout silicon strip detector prototype was fabricated for the ATLAS SCT detector. Detector modules with a strip length of 12 cm were made by butting two detectors. One of the 12 cm modules was irradiated with protons to a fluence of 1.2×1014 p/cm2, and a beam test was carried out for the non-irradiated and the irradiated detector modules. Efficiency and noise occupancy were analyzed using the beam test data. High efficiency was obtained for both detectors in the bias voltages down to about half the full depletion voltage. The noise occupancy was <2×10-4 for the 12 cm strips. The measurement of the edge region exhibited a difference in the sensitivity under the bias resistance where no extension of the n+-implant was fabricated: the non-irradiated detector showed sensitivity while the irradiated detector did not. The result was confirmed with a laser
Keywords :
proton effects; semiconductor device noise; silicon radiation detectors; ATLAS SCT detector; Si; bias resistance; bias voltages; fast binary readout electronics; irradiated detector modules; large area n-on-n silicon strip detector; noise occupancy; Breakdown voltage; Detectors; Electronic equipment testing; Fabrication; Implants; P-n junctions; Readout electronics; Resistors; Silicon; Strips;
