Title :
Correlation of radiation damage effects in high resistivity silicon detectors with results from deep level spectroscopy
Author :
Feick, H. ; Fretwurst, E. ; Moll, M. ; Lindström, G.
Author_Institution :
I. Inst. fur Experimentalphys., Hamburg Univ., Germany
fDate :
6/1/1997 12:00:00 AM
Abstract :
Neutron irradiated high resistivity silicon detectors have been subjected to isochronous annealing in order to study the changes in the full depletion voltage and the leakage current. The corresponding evolution of bulk damage induced defect levels was monitored using the TSC method. A single TSC peak is found to be correlated with the transient decay of the depletion voltage which is observed after elevated temperature annealing of inverted detectors. In conjunction with deep level parameters obtained from an I-DLTS study and changes observed in the effective doping concentration and in the leakage current after exposure to high doses of 60Co-gammas, new insight is gained into the radiation induced device deterioration and the corresponding annealing behavior
Keywords :
annealing; deep level transient spectroscopy; gamma-ray effects; leakage currents; neutron effects; silicon radiation detectors; thermally stimulated currents; 60Co; Co; I-DLTS; Si; Si detectors; TSC method; bulk damage; deep level transient spectroscopy; defect levels; depletion voltage; effective doping concentration; elevated temperature annealing; gamma irradiation; high resistivity; isochronous annealing; leakage current; neutron irradiation; radiation damage; Annealing; Conductivity; Detectors; Leak detection; Leakage current; Monitoring; Neutrons; Silicon; Temperature; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on