Title :
Study of neutron damage in GaAs MESFETs
Author :
Meneghesso, G. ; Paccagnella, A. ; Camin, D.V. ; Fedyakin, N. ; Pessina, G. ; Canali, C.
Author_Institution :
Dipt. di Elettronica e Inf., Padova Univ., Italy
fDate :
6/1/1997 12:00:00 AM
Abstract :
Implanted channel GaAs MESFETs subjected to neutron irradiation show large modifications of the pinch-off voltage, open-channel saturation current, and transconductance in agreement with previous results. In this work we demonstrate how an experimental technique, based on the frequency dispersion of the transconductance, gm(f), and output conductance, gD(f), can identify the deep levels induced by neutron irradiation through measurements performed directly on packaged devices. After irradiation, a frequency dispersion of the transconductance has been observed, while it was flat in the unirradiated device. The gm(f) curve shape depends on the device bias conditions, and it has permitted for the first time to evaluate the activation energy of different deep levels induced by neutron irradiation in MESFETs
Keywords :
Schottky gate field effect transistors; deep levels; detector circuits; electric admittance; gallium arsenide; neutron effects; nuclear electronics; preamplifiers; pulse amplifiers; GaAs; GaAs MESFETs; activation energy; bias; deep levels; frequency dispersion; gD(f); gm(f); neutron irradiation; open-channel saturation current; output conductance; pinch-off voltage; radiation damage; transconductance; Dispersion; Frequency measurement; Gallium arsenide; MESFETs; Neutrons; Packaging; Performance evaluation; Shape; Transconductance; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
