Title :
Gas avalanche pixel detectors
Author :
Hong, W.S. ; Cho, H.S. ; Perez-Mendez, V. ; Kadyk, J. ; Palaio, N.
Author_Institution :
Div. of Eng., Lawrence Berkeley Lab., CA, USA
fDate :
6/1/1997 12:00:00 AM
Abstract :
We describe the structure and avalanche gain of gaseous pixel detectors. Each anode is a square 20 μm×20 μm in size connected to an individual pad through a plated center section. The cathodes are plated squares interconnected to a common lead. The anode squares have a pitch of 200 μm in both x- and y-directions. The anodes and cathodes are aluminum layers deposited on amorphous silicon alloyed with carbon (a-Si:C:H) to produce a bulk resistivity of ~1013 item. Measurements on signals from a group of anodes shows an avalanche gas gain close to 104 at a cathode-anode potential of 640 volts using a gas mixture of 50/50 argon-ethane. The avalanche gain is about a factor of 3 higher than that of microstrip devices we have tested, having the same pitch. For our initial measurements, 16 anodes were connected together to a charge sensitive preamplifier. In a final chamber each anode would be connected to an a-Si:H p-i-n readout diode with signals read out sequentially as in flat screen devices
Keywords :
p-i-n diodes; position sensitive particle detectors; 20 mum; 640 V; Al-Si:C,H; a-Si:H p-i-n readout diode; anode; argon-ethane gas mixture; avalanche gain; bulk resistivity; cathodes; charge sensitive preamplifier; common lead; flat screen devices; gas avalanche pixel detectors; gaseous pixel detectors; plated center section; plated squares; Aluminum alloys; Amorphous silicon; Anodes; Cathodes; Conductivity; Detectors; Gain measurement; Microstrip; Silicon alloys; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on