Title :
Simulation and measurement of multiplication in thin-film electroluminescent devices with doped probe layers
Author :
Neyts, Kristiaan ; Corlatan, Dorina
Author_Institution :
Dept. of Mater. Sci., California Univ., Berkeley, CA, USA
fDate :
4/1/1998 12:00:00 AM
Abstract :
When a single voltage pulse is applied to an electroluminescent (EL) device after previous illumination, the current through the phosphor layer will normally not be homogeneous, but increase from the cathodic side-where the electrons tunnel from-to the anodic side, due to multiplication. The positive charges that remain after the multiplication process cause a positive space charge that has been observed in various experiments and influences the efficiency. In this paper a simple numerical model is proposed for the calculation of charge transfer and light emission, in the case that multiplication takes place during a voltage pulse after previous illumination
Keywords :
electroluminescent devices; optical films; phosphors; space charge; tunnelling; charge transfer; doped probe layer; efficiency; electron tunneling; illumination; inhomogeneous current; light emission; multiplication; numerical model; phosphor; simulation; space charge; thin-film electroluminescent device; voltage pulse; Capacitors; Electroluminescent devices; Electrons; Hysteresis; Phosphors; Probes; Pulse measurements; Space charge; Thin film devices; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
