Development of a novel image intensifier of an amplified metal-oxide semiconductor imager overlaid with electron-bombarded amorphous silicon

Author

Andoh, Fumihiko ; Kosugi, Mitsuo ; Kawamura, Tatsuro ; Araki, Shuichi ; Taketoshi, Kazuhisa

Author_Institution

NHK Sci. & Tech. Res. Labs., Tokyo, Japan

Volume

45

Issue

4

fYear

1998

fDate

4/1/1998 12:00:00 AM

Firstpage

778

Lastpage

784

Abstract

We developed a novel image intensifier (II) of an amplified metal-oxide-semiconductor (MOS) imager (AMI) overlaid with electron-bombarded (EB) amorphous silicon (a-Si). The electron bombardment gain (EB gain) was 1500 at an accelerating voltage of 10 kV. Since the multiplication process was free from a phosphorescent screen and a coupling fiber plate as in the conventional II, the resolution was high and the picture quality was good and free from granularity noises, white spots, lag and sticking. As for fatigue of X-ray irradiation, the contrasts of a vertical stripe (Smear) are not detectable and damaged areas in AMI are weak whereas both of those in charge-coupled devices (CCDs) are strong

Keywords

MIS devices; amorphous semiconductors; electron bombarded semiconductor devices; elemental semiconductors; image intensifiers; image sensors; silicon; 10 kV; Si; Smear; X-ray irradiation; amplified MOS imager; contrast; electron bombardment gain; electron-bombarded amorphous silicon; fatigue; image intensifier; multiplication; picture quality; resolution; vertical stripe; Acceleration; Ambient intelligence; Amorphous silicon; Electrons; Fatigue; Image intensifiers; Phosphorescence; Voltage; White noise; X-ray detection;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.662775

Filename

662775