Title :
An analytical fully-depleted SOI MOSFET model considering the effects of self-heating and source/drain resistance
Author :
Hu, Man-chun ; Jang, Sheng-Lyang
Author_Institution :
Dept. of Electron. Eng., Nat. Taiwan Inst. of Technol., Taipei, Taiwan
fDate :
4/1/1998 12:00:00 AM
Abstract :
In this paper, we present a new and analytical drain current model for submicrometer SOI MOSFET´s applicable for circuit simulation. The model was developed by using a two-dimensional (2-D) Poisson equation, and considering the source/drain resistance and the self-heating effect. Using the present model, we can clearly see that the reduction of drain current with the parasitic series resistance and self-heating effect for typical SOI devices. We also can evaluate the impact of series resistance and self-heating effects. The accuracy of the presented model has been verified with the experimental data of SOI MOS devices with various geometries
Keywords :
CMOS integrated circuits; MOSFET; SPICE; VLSI; circuit analysis computing; digital simulation; semiconductor device models; silicon-on-insulator; 2D Poisson equation; MOSFET model; circuit simulation; device geometries; drain current model; fully-depleted SOI MOSFET; parasitic series resistance; self-heating effects; source/drain resistance; Analytical models; Capacitance; Circuit simulation; Conductive films; MOS devices; MOSFET circuits; Poisson equations; Thin film circuits; Very large scale integration; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
