Title :
A continuous compact MOSFET model for fully- and partially-depleted SOI devices
Author :
Sleight, Jeffrey W. ; Rios, Rafael
Author_Institution :
Technol. Dev. Group, Digital Semiconductor, Hudson, MA, USA
fDate :
4/1/1998 12:00:00 AM
Abstract :
A fully continuous compact SOI MOSFET model for circuit simulations, that automatically accounts for the for the correct body depletion condition, is presented. Unlike previously reported models that are derived for either fully-depleted (FD) or partially-depleted (PD) devices, our model accounts for the possible transitions between FD and PD behavior during the device operation
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; body depletion; circuit simulation; continuous compact SOI MOSFET model; fully-depleted device; partially-depleted device; Body regions; Circuit simulation; Doping; Electrostatics; MOS devices; MOSFET circuits; Poisson equations; Semiconductor process modeling; Substrates; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
