Dynamic modeling of amorphous- and polycrystalline-silicon devices

Author

Colalongo, Luigi ; Valdinoci, Marina ; Pellegrini, Aurelio ; Rudan, Massimo

Author_Institution

Dipt. di Elettronica, Inf. e Sistemistica, Bologna Univ., Italy

Volume

45

Issue

4

fYear

1998

fDate

4/1/1998 12:00:00 AM

Firstpage

826

Lastpage

833

Abstract

The materials of which thin-film transistors (TFTs) are fabricated are characterized by a large amount of defects, giving rise to localized states with a complex energy distribution within the gap. As a consequence, the electrical characteristics of TFTs are difficult to model analytically, and a numerical approach may be preferred to predict their performance. A new efficient method is presented to solve the time-dependent semiconductor equations accounting for energy-distributed gap states. Applications are provided to the analysis of realistic devices and inverters

Keywords

amorphous semiconductors; defect states; elemental semiconductors; semiconductor device models; silicon; thin film transistors; Si; amorphous silicon device; defects; dynamic model; electrical characteristics; energy distribution; gap states; inverter; localized states; polycrystalline silicon device; thin film transistor; time-dependent semiconductor equations; Amorphous materials; Amorphous silicon; Electric variables; Electron traps; Equations; Inverters; Performance analysis; Predictive models; Semiconductor thin films; Thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.662787

Filename

662787