Title :
Two-dimensional numerical simulation of Schottky barrier MOSFET with channel length to 10 nm
Author :
Huang, Chung-Kuang ; Zhang, Wei E. ; Yang, C.H.
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
fDate :
4/1/1998 12:00:00 AM
Abstract :
We present simulation results of a silicon-based metal-oxide-semiconductor field-effect transistor (MOSFET), which has a structure similar to that of a conventional MOSFET, but the source and drain regions are now entirely replaced by metals. By using abrupt metal/silicon Schottky junctions, short-channel effects are avoided. Based on a few commonly used physical assumptions, we have calculated the transistor characteristics, and we find that this new three-terminal transistor can offer gain and impedance isolation, desirable for logic circuit applications
Keywords :
MOSFET; Schottky barriers; semiconductor device models; 10 nm; Schottky barrier MOSFET; Si; channel length; gain; impedance isolation; logic circuit; metal/silicon Schottky junction; scaling; three-terminal transistor; two-dimensional numerical simulation; ultrasmall device; Electrical resistance measurement; FETs; Helium; Impedance; Logic circuits; MOSFET circuits; Numerical simulation; Schottky barriers; Silicon; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
