The impact of metal-1 plasma processing-induced hot carrier injection on the characteristics and reliability of n-MOSFETs

Author

Hassan, Motasim G El ; Awadelkarim, Osama O. ; Werking, James D.

Author_Institution

Electron. Mater. & Process. Res. Lab., Pennsylvania State Univ., University Park, PA, USA

Volume

45

Issue

4

fYear

1998

fDate

4/1/1998 12:00:00 AM

Firstpage

861

Lastpage

866

Abstract

We report on plasma processing-induced damage to sub-half-micron n-MOSFETs that is invoked by potential differences between device terminals during metal-1 plasma processing. The damage mechanism is identified as hot carrier (HC) injection promoted by the layout of metal-1 interconnect. Using conventional and modified charge pumping techniques as well as transistor parameter measurements, we also investigate the impact of the damage on device reliability by applying Fowler-Nordheim (FN) and hot carrier stresses. The results show the severe impact of this damage on device reliability, which is attributed to trapping of positive charge at the drain edge that is enough to shorten the device channel

Keywords

MOSFET; hot carriers; interface states; plasma applications; semiconductor device metallisation; semiconductor device reliability; Fowler-Nordheim stresses; charge pumping techniques; damage mechanism; device channel; device reliability; drain edge; hot carrier stresses; induced hot carrier injection; metal-1 plasma processing; n-MOSFETs; transistor parameter measurements; Degradation; Hot carrier injection; Hot carriers; Laboratories; MOSFET circuits; Plasma devices; Plasma materials processing; Plasma measurements; Plasma properties; Stress;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.662791

Filename

662791