DocumentCode
1345495
Title
CMOS active pixel image sensors fabricated using a 1.8-V, 0.25-μm CMOS technology
Author
Wong, Hon-Sum Philip ; Chang, Richard T. ; Crabbé, Emmanuel ; Agnello, Paul D.
Author_Institution
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Volume
45
Issue
4
fYear
1998
fDate
4/1/1998 12:00:00 AM
Firstpage
889
Lastpage
894
Abstract
This paper reports the experimental results of the first CMOS active pixel image sensors (APS) fabricated using a high-performance 1.8-V, 0.25-μm CMOS logic technology. No process modifications were made to the CMOS logic technology so that the impact of device scaling on the image sensing performance can be studied. This paper highlights the device and process design considerations required to enable CMOS as an image sensor technology
Keywords
CMOS integrated circuits; image sensors; integrated circuit technology; sensitivity; 0.25 micron; 1.8 V; CMOS active pixel image sensors; CMOS logic technology; device scaling; image sensing performance; submicron CMOS technology; CMOS image sensors; CMOS logic circuits; CMOS process; CMOS technology; Charge coupled devices; Image sensors; Isolation technology; Logic devices; Pixel; Switches;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.662797
Filename
662797
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