Title :
Assessing the reliability of silicon nitride capacitors in a GaAs IC process
Author_Institution :
Microwave Technol. Div., Hewlett-Packard Co., Santa Rosa, CA, USA
fDate :
4/1/1998 12:00:00 AM
Abstract :
A method is presented for predicting the lifetime of silicon nitride (SiN) capacitors for different voltages and temperatures. The method builds on techniques used for analyzing Si MOS capacitors. Measuring breakdown voltages at different ramp rates and temperatures allows fast on-wafer determination of the field (γ) and temperature (Ea) acceleration parameters. Three different types of SiN were studied and were found to have similar values of γ and Ea, however intrinsic lifetimes varied by orders of magnitude
Keywords :
MIS capacitors; dielectric thin films; electric breakdown; failure analysis; integrated circuit reliability; life testing; monolithic integrated circuits; silicon compounds; thin film capacitors; GaAs; GaAs IC process; SiN; SiN capacitors; breakdown voltage measurement; field acceleration parameters; intrinsic lifetimes; on-wafer determination; ramp rates; reliability; temperature acceleration parameters; Acceleration; Dielectric breakdown; Gallium arsenide; Integrated circuit reliability; Life estimation; MOS capacitors; Silicon compounds; Stress; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
