Title :
A highly efficient 1.9-GHz Si high-power MOS amplifier
Author :
Yoshida, Isao ; Katsueda, Mineo ; Maruyama, Yasuo ; Kohjiro, Iwamichi
Author_Institution :
Semicond. & Integrated Circuits Div., Hitachi Ltd., Kokubunji, Japan
fDate :
4/1/1998 12:00:00 AM
Abstract :
A 1.9-GHz Si power MOSFET with 50% power-added efficiency and 0.3-1.0 W output power at a 3-5 V supply voltage has been developed for use as a high-power amplifier in cellular telephones. This MOSFET achieves high efficiency and high-power gain at low supply voltage by using a 0.5-μm gate power MOSFET with an Al-shorted metal-silicide/Si gate structure, which improves the cut-off frequency and reduces the on-state resistance
Keywords :
UHF field effect transistors; UHF power amplifiers; cellular radio; cordless telephone systems; elemental semiconductors; power MOSFET; silicon; 0.3 to 1 W; 0.5 micron; 1.9 GHz; 3 to 5 V; 50 percent; Al-Si; Al-shorted metal-silicide/Si gate structure; Si high-power MOS amplifier; UHF FET; cellular telephones; power-added efficiency; Electrodes; Fabrication; High power amplifiers; Integrated circuit technology; MOSFET circuits; Personal communication networks; Power MOSFET; Power amplifiers; Substrates; Ultra large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
