DocumentCode
1345570
Title
Light-hadron induced SER and scaling relations for 16- and 64-Mb DRAMS
Author
Hofman, G.J. ; Peterson, R.J. ; Gelderloos, C.J. ; Ristinen, R.A. ; Nelson, M.E. ; Thompson, A. ; Ziegler, J.F. ; Mullfeld, H.
Author_Institution
Nucl. Phys. Lab., Colorado Univ., Boulder, CO, USA
Volume
47
Issue
2
fYear
2000
fDate
4/1/2000 12:00:00 AM
Firstpage
403
Lastpage
407
Abstract
We report on soft error rates (SER) of 16 and 64 Mb dynamic memory chips induced by three types of elementary particles, neutrons, protons, and pions, with emphasis on results obtained with pion beams. Significant SER differences, up to a factor 1000, are seen between various manufacturers and cell technologies. We discuss reaction mechanisms and by comparing SER rates to nuclear reaction cross sections present guidelines for predicting failure rates
Keywords
DRAM chips; meson effects; neutron effects; proton effects; radiation hardening (electronics); 16 MB; 64 MB; circuit design; failure rates; light-hadron induced soft error rates; memory testing; neutrons; nuclear reaction cross sections; pions; protons; reaction mechanisms; scaling relations; Error analysis; Mesons; Neutrons; Particle beams; Pollution measurement; Protons; Random access memory; Sea measurements; Semiconductor device measurement; Testing;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.846273
Filename
846273
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