A detailed microscopic analysis of deep levels in heavily irradiated-medium resistivity silicon detectors

Author

Menichelli, D. ; Pirollo, S. ; Li, Z.

Author_Institution

Dipt. di Energetica, Ist. Nazionale di Fisica Nucl., Firenze, Italy

Volume

47

Issue

2

fYear

2000

fDate

4/1/2000 12:00:00 AM

Firstpage

446

Lastpage

451

Abstract

In this work we show a detailed deep levels analysis (an energy resolution of 50 meV was reached) of a set of medium resistivity silicon samples, irradiated up to a fluence of 2.5·10¹⁵ n/cm ². In order to discriminate the large number of deep levels which appear to overlap their contributions in TSC and I-DLTS spectra, we adopted an innovative numerical procedure of data analysis which determines a set of deep levels that can account for both TSC and I-DLTS spectra. We finally obtained a consistent and detailed description of deep level population, clearly showing its evolution with fluence. Some results seem to suggest the possibility of quasi-continuous distributions of localized states inside the gap

Keywords

deep level transient spectroscopy; deep levels; elemental semiconductors; silicon; silicon radiation detectors; thermally stimulated currents; Si; deep levels; energy resolution; heavily irradiated-medium resistivity silicon detectors; localized states; quasi-continuous distributions; Conductivity; Data analysis; Deconvolution; Energy resolution; Large Hadron Collider; Microscopy; Paramagnetic resonance; Radiation detectors; Radiation effects; Silicon;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.846278

Filename

846278