Title :
An analytical model for the electron velocity overshoot effects in strained-Si on SixGe1-x MOSFETs
Author :
Roldán, J.B. ; Gamiz, Francisco ; López-Villanueva, J.A. ; Carceller, J.E.
Author_Institution :
Dept. de Electron. y Tecnologia de Computadores, Granada Univ., Spain
fDate :
4/1/1998 12:00:00 AM
Abstract :
We have quantitatively described the transconductance improvement that can be obtained in deep submicron strained-Si on SixGe 1-x MOSFETs with respect to conventional Si ones due to velocity overshoot effects. We have done so making use of a Monte Carlo simulator and a recently developed transconductance analytical model
Keywords :
Ge-Si alloys; MOSFET; Monte Carlo methods; elemental semiconductors; semiconductor device models; semiconductor materials; silicon; MOSFETs; Monte Carlo simulator; Si-SiGe; analytical model; deep submicron devices; electron velocity overshoot effects; strained-Si on SixGe1-x; transconductance improvement; Analytical models; Boron; CMOS technology; Electrons; Indium; MOS devices; MOSFET circuits; Semiconductor films; Transconductance; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
