DocumentCode :
1345915
Title :
Acoustic, piezoelectric, and dielectric nonlinearities of AlN in coupled resonator filters for high RF power levels
Author :
Sahyoun, Walaa ; Duchamp, Jean-Marc ; Benech, Philippe
Author_Institution :
Lab. d´´Hyperfrequence de Chambery, Minatec, Grenoble, France
Volume :
58
Issue :
10
fYear :
2011
fDate :
10/1/2011 12:00:00 AM
Firstpage :
2162
Lastpage :
2170
Abstract :
Coupled resonator filters (CRFs) are the new generation of BAW filters recently designed for the front-end modules of mobile transmission systems. Looking for designers´ requirements, CRF devices have been characterized and modeled. The model based on equivalent circuits relies on material constants such as stiffness and electro-coupling coefficients, and works only for linear-mode propagation. Because of their positions between antennas and power amplifiers, they often work under high RF power, inducing nonlinear response in the AlN piezoelectric layer. In this work, we analyze for the first time the nonlinear behavior of AlN material particularly for coupled BAW resonators. To characterize the nonlinear effects in CRFs, we measure the 1-dB gain compression point (P1dB) and the intercept point (IP3). Then, we develop a nonlinear model of CRFs using harmonic balance (HB) simulation in commercially available software. The HB environment allows fitting simulations to measurements in terms of P1dB and IP3. We find that a high RF power induces nonlinear changes in the material constants´ real parts: elastic stiffness c33 (4.9%), piezoelectric e33 (17.4%), and permittivity ε33 (5.2%). These nonlinear variations of material constants describe the nonlinear behavior of CRF devices using the same deposit process for AlN material.
Keywords :
III-V semiconductors; aluminium compounds; bulk acoustic wave devices; dielectric resonator filters; elastic constants; permittivity; piezoelectric semiconductors; piezoelectricity; semiconductor device models; surface acoustic wave resonator filters; surface acoustic wave resonators; wide band gap semiconductors; AlN; AlN material; AlN piezoelectric layer; BAW filters; RF power levels; acoustic nonlinearity; antennas; compression point; coupled BAW resonators; coupled resonator filter devices; deposit process; designer requirements; dielectric nonlinearity; elastic stiffness; electrocoupling coefficient; equivalent circuits; fitting simulations; front-end modules; harmonic balance environment; harmonic balance simulation; intercept point; linear-mode propagation; material constants; mobile transmission systems; nonlinear behavior; nonlinear changes; nonlinear effects; nonlinear model; nonlinear response; nonlinear variations; permittivity; piezoelectric constant; piezoelectric nonlinearity; power amplifiers; stiffness coefficient; Band pass filters; Computational modeling; Gain; Integrated circuit modeling; Materials; Radio frequency; Resonator filters;
fLanguage :
English
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-3010
Type :
jour
DOI :
10.1109/TUFFC.2011.2065
Filename :
6040005
Link To Document :
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