Spectroscopic measurement of mounting-induced strain in optoelectronic devices

Author

Bärwolff, Artur ; Tomm, Jens W. ; Müller, Roland ; Weiß, Stefan ; Hutter, Matthias ; Oppermann, Hermann ; Reichl, Herbert

Author_Institution

Max-Born-Inst. fur Nichtlineare Opt. und Kurzzeitspektroskopie, Berlin, Germany

Volume

23

Issue

2

fYear

2000

fDate

5/1/2000 12:00:00 AM

Firstpage

170

Lastpage

175

Abstract

Mounting-induced strain in high-power laser diodes is studied by noninvasive photocurrent (PC) spectroscopy. We demonstrate that the strain can be determined with high accuracy by means of Fourier-transform (FT) photocurrent measurements. The optical transitions within the quantum well (QW) region of identical InAlGaAs/GaAs laser diodes which were mounted with different external strain have shown spectral shifts of up to 10 meV. The accuracy of the energy level shifts obtained by FT PC measurements is of 150 μ eV for the QW-region and 500 μeV for the waveguide region. The measured strain status of the active region is compared with model calculations to quantify the amount of strain which is transferred from the heat sink to the semiconductor device

Keywords

Fourier transform spectroscopy; III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser variables measurement; photoconductivity; quantum well lasers; semiconductor device packaging; strain measurement; Fourier transform photocurrent spectroscopy; InAlGaAs-GaAs; energy level shift; heat sink; high power laser diode; mounting-induced strain; noninvasive measurement; optical transition; optoelectronic device; quantum well; semiconductor device; waveguide; Capacitive sensors; Diode lasers; Energy measurement; Energy states; Gallium arsenide; Optical waveguides; Photoconductivity; Semiconductor waveguides; Spectroscopy; Strain measurement;

fLanguage

English

Journal_Title

Advanced Packaging, IEEE Transactions on

Publisher

ieee

ISSN

1521-3323

Type

jour

DOI

10.1109/6040.846629

Filename

846629