Title :
Memory Devices: Energy–Space–Time Tradeoffs
Author :
Zhirnov, Victor V. ; Cavin, Ralph K., III ; Menzel, Stephan ; Linn, Eike ; Schmelzer, Sebastian ; Braühaus, Dennis ; Schindler, Christina ; Waser, Rainer
Author_Institution :
Semicond. Res. Corp., Durham, NC, USA
Abstract :
Many memory candidates based on beyond complementary metal-oxide-semiconductor (CMOS) nanoelectronics have been proposed, but no clear successor has yet been identified. In this paper, we offer a methodology for system-level analysis and address the relationship of the maximum performance of a given memory device type to device physics. The method is illustrated for the classical dynamic RAM (DRAM) device and for the emerging memory device known as the resistive RAM (ReRAM).
Keywords :
CMOS memory circuits; nanoelectronics; random-access storage; DRAM device; ReRAM; beyond CMOS nanoelectronics; complementary metal-oxide-semiconductor; dynamic RAM; energy-space-time tradeoffs; memory devices; resistive RAM; Arrays; Capacitance; Capacitors; FETs; Nanoelectronics; Random access memory; Switches; Dynamic RAM (DRAM); fundamental limits; memory; nanodevices; resistive RAM (ReRAM);
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/JPROC.2010.2064271
