DocumentCode :
1346075
Title :
A comprehensive submicrometer MOST delay model and its application to CMOS buffers
Author :
Cocchini, Pasquale ; Piccinini, Gianluca ; Zamboni, Maurizio
Author_Institution :
Dept. of Electron., Politecnico di Torino, Italy
Volume :
32
Issue :
8
fYear :
1997
fDate :
8/1/1997 12:00:00 AM
Firstpage :
1254
Lastpage :
1262
Abstract :
In this paper, an accurate delay model for MOS transistors in submicrometer CMOS digital circuits is presented. It takes into account a ramp shape input voltage and a feedforward capacitive coupling between gate and drain nodes, along with the main second-order effects present in short-channel MOS transistors. The proposed model shows an average agreement with SPICE simulations of 3% in the calculation of the propagation time, tested on a minimum inverter with a 0.7-μm CMOS reference technology for a wide range of input voltage slopes. An example of application in optimization algorithms regarding CMOS tapered buffers is also reported. A maximum error ranging from 3-6% with respect to SPICE has been found for the optimized circuits
Keywords :
CMOS digital integrated circuits; MOSFET; SPICE; buffer circuits; circuit analysis computing; circuit optimisation; delays; integrated circuit modelling; semiconductor device models; 0.7 mum; CMOS reference technology; CMOS tapered buffers; MOS transistors; SPICE simulations; delay estimation; feedforward capacitive coupling; input voltage slope range; minimum inverter; optimization algorithms; propagation time; ramp shape input voltage; second-order effects; short-channel MOS transistors; submicrometer CMOS digital circuits; submicrometer MOST delay model; CMOS digital integrated circuits; CMOS technology; Coupling circuits; Delay; Digital circuits; MOSFETs; SPICE; Semiconductor device modeling; Shape; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.604081
Filename :
604081
Link To Document :
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