Title :
A GaAs HBT 16×16 10-Gb/s/channel crosspoint switch
Author_Institution :
Nortel Technol., Ottawa, Ont., Canada
fDate :
8/1/1997 12:00:00 AM
Abstract :
A 16×16 crosspoint switch IC has been designed and implemented in a 2-μm GaAs heterojunction bipolar transistor (HBT) technology. The IC is a strictly nonblocking switch with broadcast capability and asynchronous data paths. The IC has fully differential internal circuitry and is packaged in a custom high-speed assembly. Test results confirmed that the IC achieves a 10-Gb/s/channel (or 160-Gb/s aggregate) capacity, the highest reported to date for a 16×16 crosspoint switch IC
Keywords :
III-V semiconductors; bipolar digital integrated circuits; electronic switching systems; gallium arsenide; heterojunction bipolar transistors; 10 Gbit/s; 160 Gbit/s; 2 micron; GaAs; GaAs HBT crosspoint switch IC; asynchronous data path; broadcasting; custom high-speed assembly package; differential internal circuitry; heterojunction bipolar transistor technology; nonblocking switch; Assembly; Bipolar integrated circuits; Broadcasting; Circuit testing; Gallium arsenide; Heterojunction bipolar transistors; High speed integrated circuits; Integrated circuit packaging; Integrated circuit testing; Switches;
Journal_Title :
Solid-State Circuits, IEEE Journal of
