Title :
Nanosecond Pulse Generation in a Silicon Microwire
Author :
Cywar, Adam ; Bakan, Gokhan ; Silva, Helena ; Gokirmak, Ali
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Connecticut, Storrs, CT, USA
Abstract :
We report the generation of trapezoidal current pulses by applying a dc voltage to a single nanocrystalline silicon microwire through a load. The wire is expected to be physically disconnecting and reconnecting at a constriction near its midpoint as a result of volume change in repeated solid-liquid phase transitions. A scanning electron microscope image and the wire´s electrical characteristics suggest that the wire is partially molten at the time of disconnection. The current pulses rise from 0 to 7 mA and have widths of 13.48 ± 0.65 ns, a repetition rate of 9.12 ± 0.06 MHz, rise/fall times ≤ 350 ps, a peak power density of ~1.9 kW/mm2, and a very consistent pulse shape.
Keywords :
elemental semiconductors; nanoelectronics; nanostructured materials; pulse generators; scanning electron microscopy; silicon; solid-liquid transformations; Si; dc voltage; electrical characteristics; nanosecond pulse generation; power density; pulse shape; repetition rate; scanning electron microscopy; single nanocrystalline silicon microwire; solid-liquid phase transitions; trapezoidal current pulses; Conductivity; Current measurement; Micromechanical devices; Oscilloscopes; Pulse generation; Pulse measurements; Thin films; Annealing; high-temperature techniques; liquid silicon; microelectromechanical devices; phase transition; pulse circuits; silicon; thin-film devices;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2072772