Title :
Enhanced-Performance Germanium Nanowire Tunneling Field-Effect Transistors Using Flash-Assisted Rapid Thermal Process
Author :
Nah, Junghyo ; Liu, En-Shao ; Varahramyan, Kamran M. ; Dillen, Dave ; McCoy, Steve ; Chan, Jason ; Tutuc, Emanuel
Author_Institution :
Microelectron. Res. Center, Univ. of Texas, Austin, TX, USA
Abstract :
We report the enhanced performance of Ge nanowire (NW) tunneling field-effect transistors (TFETs), realized using a millisecond flash-assisted rapid thermal process (fRTP) for dopant activation. The electrical characteristics of our fRTP-activated NW TFETs exhibit maximum drive currents up toImax ~ 28 μA/μm at Vdd = -3 V and improved subthreshold swings. By comparison, NW TFETs realized using conventional RTP for dopant activation show an order of magnitude lower current. We attribute these findings to a more abrupt doping profile at the tunnel junction, owing to reduced dopant diffusion and improved dopant activation.
Keywords :
Ge-Si alloys; doping profiles; elemental semiconductors; field effect transistors; germanium; nanowires; rapid thermal processing; semiconductor quantum wires; tunnelling; Ge-SixGe1-x; TFET; dopant activation; dopant diffusion; doping profile; drive currents; electrical characteristics; fRTP; germanium nanowire tunneling field-effect transistors; millisecond flash-assisted rapid thermal process; tunnel junction; Annealing; Logic gates; Nanostructured materials; Silicon; Transistors; Tunneling; Core shell; flash anneal; germanium; heterostructure; nanowire (NW); tunneling field-effect transistor (TFET);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2072770
