DocumentCode
1346131
Title
Degradation of GaAs MESFETs in Radiation Environments
Author
Gutmann, R.J. ; Borrego, J.M.
Author_Institution
Electrical & Systems Engineering; Rensselaer Polytechnic Institute; JEC Room #7018; Troy New York 12181 USA.
Issue
3
fYear
1980
Firstpage
232
Lastpage
236
Abstract
The effects of gamma and neutron irradiation on lownoise, GaAs MESFETs are reviewed, with emphasis on microwave amplifier characterisitics. With gamma irradiation, the amplifier noise figure degrades above 107 rads (Si), without change in signal parameters. With neutron irradiation, amplifier gain and noise figure degrade above 1014 n/cm2. With gamma irradiation, unidentified levels are apparently introduced that respond at microwave frequencies. With neutron irradiation, changes are caused principally by carrier compensation in the graded region between the channel and substrate. Device characterization procedures, experimental results, and degradation mechanisms are discussed.
Keywords
Degradation; Gallium arsenide; MESFETs; Microwave devices; Microwave measurements; Neutrons; Noise figure; Noise measurement; Scattering parameters; Temperature; Degradation mechanisms; MESFETs; Radiation effects;
fLanguage
English
Journal_Title
Reliability, IEEE Transactions on
Publisher
ieee
ISSN
0018-9529
Type
jour
DOI
10.1109/TR.1980.5220808
Filename
5220808
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