Title :
A 65-nm CMOS Fully Integrated Transceiver Module for 60-GHz Wireless HD Applications
Author :
Siligaris, Alexandre ; Richard, Olivier ; Martineau, Baudouin ; Mounet, Christopher ; Chaix, Fabrice ; Ferragut, Romain ; Dehos, Cedric ; Lanteri, Jérôme ; Dussopt, Laurent ; Yamamoto, Silas D. ; Pilard, Romain ; Busson, Pierre ; Cathelin, Andreia ; Belot
Author_Institution :
CEA-LETI, Grenoble, France
Abstract :
A fully integrated WirelessHD compatible 60-GHz transceiver module in 65-nm CMOS process is presented, covering the four standard channels. The silicon die is flip-chipped on top of a low-cost HTCC module which also includes an external 65-nm CMOS PA and large beamwidth antennas targeting industrial manufacturability. The module achieves a 16QAM OFDM modulation wireless link with 3.8 Gbps over 1 m. The transceiver consumption is 454 mW in RX mode (including PLL) and 1090 mW in TX mode (including PLL and external PA).
Keywords :
CMOS analogue integrated circuits; OFDM modulation; elemental semiconductors; field effect MIMIC; millimetre wave antennas; millimetre wave power amplifiers; quadrature amplitude modulation; radio links; radio transceivers; silicon; 16QAM OFDM modulation wireless link; CMOS PA; CMOS fully integrated transceiver module; RX mode; Si; TX mode; beamwidth antennas; bit rate 3.8 Gbit/s; distance 1 m; frequency 60 GHz; fully integrated wireless HD compatible transceiver module; low-cost HTCC module; power 1090 mW; power 454 mW; power amplifier; silicon die; size 65 nm; CMOS integrated circuits; Computer architecture; Frequency synthesizers; Low-noise amplifiers; OFDM; Power amplifiers; Transceivers; 60 GHz; Analog baseband; CMOS; Gm-C continuous-time filter; OFDM; high-temperature cofired ceramic (HTCC) module; low-noise amplifier (LNA); millimeter-wave (mmW) design; power amplifier; wireless HD;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2011.2166662