DocumentCode :
1346483
Title :
Dendritic material as a dry-release sacrificial layer
Author :
Suh, Hyuk-Jeen ; Bharathi, Pamidighantam ; Beebe, David J. ; Moore, Jeffrey S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Volume :
9
Issue :
2
fYear :
2000
fDate :
6/1/2000 12:00:00 AM
Firstpage :
198
Lastpage :
205
Abstract :
A dry-release process using highly structured dendritic material, specifically, hyperbranched polymers (HBP´s), has been developed. A particular HBP under study, known as HB560, has been characterized and successfully integrated with microelectromechanical systems processing. An array of electroplated nickel cantilever beams 100 /spl mu/m/spl times/100 /spl mu/m /spl sim/1000 /spl mu/m in length has been successfully fabricated and dry released. The required release time is 10 min at 600/spl deg/C in O/sub 2/. Single open-ended microchannels were fabricated to determine the etch time and tunneling length achieved using HB560 as a sacrificial material. The time improvement for the sacrificial release is on the order of 40/spl times/ compared to standard HF wet-etch processes. Etch lengths of 1 cm have been successfully demonstrated with a sacrificial layer aspect ratio of 1600. A photosensitive version of the dendritic material has also been synthesized and characterized to reduce the process steps.
Keywords :
dendritic structure; micromechanical devices; polymer films; sputter etching; tunnelling; 600 C; HB560; Ni; aspect ratio; dendritic material; dry etching; dry release process; electroplated nickel cantilever beam array; hyperbranched polymer; microchannel fabrication; microelectromechanical system; sacrificial layer; tunneling; Adhesives; Chemical technology; Dry etching; Hafnium; Microelectromechanical systems; Microstructure; Nickel; Polymers; Structural beams; Wet etching;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/84.846700
Filename :
846700
Link To Document :
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