DocumentCode :
1346504
Title :
1/f noise considerations for the design and process optimization of piezoresistive cantilevers
Author :
Harkey, J.A. ; Kenny, Thomas W.
Author_Institution :
Dept. of Mech. Eng., Stanford Univ., CA, USA
Volume :
9
Issue :
2
fYear :
2000
fDate :
6/1/2000 12:00:00 AM
Firstpage :
226
Lastpage :
235
Abstract :
Piezoresistive cantilevers are limited by two major noise sources: Johnson noise, which is independent of frequency, and conductance fluctuation noise, which has a 1/f spectrum. The 1/f fluctuations of piezoresistive cantilevers are shown to vary inversely with the total number of carriers in the piezoresistor, as formulated by Hooge in 1969. Therefore, while 1/f noise is reduced for large heavily doped cantilevers, sensitivity considerations favor thin lightly doped cantilevers. Balancing these conflicting constraints produces optima for many design and processing parameters. For a cantilever with specified spring constant and bandwidth requirements, optima are identified for the beam thickness and length, and it is shown that the legs should be between 1/3 and 2/3 of the total length with a doping depth that is 1/3 of the beam thickness. Additionally, an optimal doping concentration is identified as a function of the cantilever volume and the measurement bandwidth. Annealing reduces 1/f noise, but causes a loss in sensitivity due to dopant diffusion, and an optimal anneal is computed with a typical diffusion length 10/sup -8/ cm. The analysis, methods, and some of the conclusions of this paper are also applicable to other types of piezoresistive sensors.
Keywords :
1/f noise; annealing; diffusion; doping profiles; microsensors; piezoresistive devices; 1/f noise; annealing; bandwidth; design optimization; dopant diffusion; doping profile; integrated sensor; piezoresistive cantilever; process optimization; spring constant; Annealing; Bandwidth; Design optimization; Doping; Fluctuations; Frequency; Noise reduction; Piezoresistance; Process design; Structural beams;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/84.846703
Filename :
846703
Link To Document :
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