DocumentCode :
1346709
Title :
1-GHz Monolithically Integrated Hybrid Mode-Locked InP Laser
Author :
Cheung, Stanley ; Baek, Jong-Hwa ; Scott, Ryan P. ; Fontaine, Nicolas K. ; Soares, Francisco M. ; Zhou, Xiaoping ; Baney, Douglas M. ; Ben Yoo, S.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California at Davis, Davis, CA, USA
Volume :
22
Issue :
24
fYear :
2010
Firstpage :
1793
Lastpage :
1795
Abstract :
This letter demonstrates a 1-GHz hybrid mode-locked monolithic semiconductor laser fabricated on indium phosphide. Its operating regimes are explored and optical pulses as short as 36 ps were measured. The linear cavity is 41 mm long with integrated active quantum well and passive waveguide structures. To our knowledge, this is the lowest reported repetition rate for a monolithically integrated mode-locked semiconductor laser. We further describe optimization steps of the saturable absorber reverse bias, driving RF frequency, and the semiconductor optical amplifier gain current for minimal output pulsewidth.
Keywords :
III-V semiconductors; indium compounds; integrated optoelectronics; laser mode locking; optical saturable absorption; optical waveguides; optimisation; semiconductor optical amplifiers; InP; frequency 1 GHz; hybrid mode-locked laser; indium phosphide; integrated active quantum well; linear cavity; monolithically integrated mode-locked semiconductor laser; optical pulse; optimization; passive waveguide structures; saturable absorber reverse bias; semiconductor optical amplifier; Cavity resonators; Laser mode locking; Optical mixing; Optical pulses; Optical waveguides; Radio frequency; Semiconductor lasers; Integrated photonic devices; mode-locked lasers (MLLs); optical pulses; semiconductor lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2010.2086050
Filename :
5598511
Link To Document :
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