Quasi-Phase-Matched Cavity-Enhanced Raman Converter Based on a Silicon Nanowire Ring

Author

Vermeulen, Nathalie ; Sipe, J.E. ; Thienpont, Hugo

Author_Institution

Dept. of Appl. Phys. & Photonics, Vrije Univ. Brussel, Brussels, Belgium

Volume

22

Issue

24

fYear

2010

Firstpage

1796

Lastpage

1798

Abstract

We propose a silicon ring Raman converter based on a low-loss nanowire ring, in which the spatial variation of the Raman gain for transverse-electric polarization is used to quasi-phase-match the wavelength conversion process. When using the intrinsic silicon-on-insulator platform, this quasi-phase-matching scheme, combined with the low propagation losses, can give rise to conversion efficiencies that exceed 0 dB at modest pump powers, and that are more than 6 dB higher than those of silicon ring Raman converters in which perfect phase-matching is established through dispersion engineering.

Keywords

coherent antiStokes Raman scattering; elemental semiconductors; integrated optics; light polarisation; light propagation; nanophotonics; nanowires; optical communication equipment; optical dispersion; optical phase matching; optical pumping; optical wavelength conversion; semiconductor quantum wires; silicon; silicon-on-insulator; CARS; Si-SiO₂; intrinsic silicon-on-insulator platform; light propagation; optical communications; optical dispersion; optical pumping; quasiphase-matched cavity-enhanced Raman converter; silicon nanowire ring; transverse-electric polarization; wavelength conversion process; Frequency conversion; Optical wavelength conversion; Optimized production technology; Raman scattering; Silicon; Stimulated emission; Frequency conversion; Raman scattering; quasi-phase-matching;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2010.2086051

Filename

5598515