DocumentCode :
1346745
Title :
Investigation of Optical Performance of InGaN MQW LED With Thin Last Barrier
Author :
Yen, Sheng-Horng ; Tsai, Meng-Lun ; Tsai, Miao-Chan ; Chang, Shu-Jeng ; Kuo, Yen-Kuang
Author_Institution :
R&D Div., Epistar Co., Ltd., Hsinchu, Taiwan
Volume :
22
Issue :
24
fYear :
2010
Firstpage :
1787
Lastpage :
1789
Abstract :
In this work, the optical performance of the blue InGaN light-emitting diodes (LEDs) with varied last barrier thickness is investigated. The experimental measurement shows that the optical power of the InGaN LED with thinner last barrier is apparently improved. According to simulation analysis, thinner last barrier is beneficial for increasing the hole injection efficiency and holes can inject into more quantum wells within the active region. With better hole injection efficiency, the leakage electrons from active region to p-side layers are depressed correspondingly. Therefore, the radiative recombination and optical power are enhanced accordingly when the thinner last barrier is utilized.
Keywords :
III-V semiconductors; charge injection; electron-hole recombination; gallium compounds; indium compounds; leakage currents; light emitting diodes; semiconductor device models; semiconductor quantum wells; wide band gap semiconductors; InGaN; barrier thickness; blue light-emitting diodes; hole injection efficiency; leakage electrons; multiquantum well LED; p-side layers; radiative recombination; Charge carrier processes; Current density; Gallium nitride; Light emitting diodes; Mathematical model; Optical sensors; Radiative recombination; Light-emitting diodes (LEDs); quantum wells (QWs); semiconductor devices;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2010.2085427
Filename :
5598516
Link To Document :
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