Title :
A low-power monolithic GaAs FET bandpass filter based on negative resistance technique
Author :
Cho, Yong-Ho ; Hong, Song-Cheol ; Kwon, Young-Se
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
fDate :
4/1/1998 12:00:00 AM
Abstract :
This paper describes a monolithic GaAs FET active bandpass filter utilizing negative resistance elements. The negative resistance element was realized with a common-drain FET with series inductive feedback and the measured output impedance characteristics are given. The fabricated monolithic fourth-order filter showed an insertion loss of 0.7 dB at 4.85 GHz and a 3-dB bandwidth of 50 MHz with a DC power consumption of 7.5 mW
Keywords :
III-V semiconductors; active filters; band-pass filters; circuit feedback; field effect MMIC; gallium arsenide; microwave filters; negative resistance devices; 0.7 dB; 4.85 GHz; 50 MHz; 7.5 mW; GaAs; SHF; active bandpass filter; common-drain FET; fourth-order filter; low-power bandpass filter; monolithic GaAs FET bandpass filter; negative resistance technique; output impedance characteristics; series inductive feedback; Band pass filters; Bandwidth; Electrical resistance measurement; Energy consumption; FETs; Gallium arsenide; Impedance measurement; Insertion loss; Negative feedback; Output feedback;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
