DocumentCode
1346970
Title
Ultrathin oxide-nitride gate dielectric MOSFET´s
Author
Parker, C.G. ; Lucovsky, G. ; Hauser, J.R.
Author_Institution
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Volume
19
Issue
4
fYear
1998
fDate
4/1/1998 12:00:00 AM
Firstpage
106
Lastpage
108
Abstract
The first ultrathin oxide-nitride (O-N) gate dielectrics with oxide equivalent thickness of less than 2 nm have been deposited and characterized in n-MOSFET´s. The O-N gates, deposited by remote plasma-enhanced CVD, demonstrate reduced gate leakage when compared with oxides of equivalent thickness while retaining comparable drive currents.
Keywords
MOSFET; dielectric thin films; leakage currents; plasma CVD coatings; 2 nm; NMOSFET; gate leakage reduction; n-MOSFET; n-channel MOSFET; remote plasma-enhanced CVD; ultrathin oxide-nitride gate dielectric; Dielectric constant; Dielectric thin films; Dielectrics and electrical insulation; Etching; MOSFET circuits; Oxidation; Plasma applications; Plasma chemistry; Plasma density; Plasma temperature;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.663529
Filename
663529
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