Title :
Ultrathin oxide-nitride gate dielectric MOSFET´s
Author :
Parker, C.G. ; Lucovsky, G. ; Hauser, J.R.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
fDate :
4/1/1998 12:00:00 AM
Abstract :
The first ultrathin oxide-nitride (O-N) gate dielectrics with oxide equivalent thickness of less than 2 nm have been deposited and characterized in n-MOSFET´s. The O-N gates, deposited by remote plasma-enhanced CVD, demonstrate reduced gate leakage when compared with oxides of equivalent thickness while retaining comparable drive currents.
Keywords :
MOSFET; dielectric thin films; leakage currents; plasma CVD coatings; 2 nm; NMOSFET; gate leakage reduction; n-MOSFET; n-channel MOSFET; remote plasma-enhanced CVD; ultrathin oxide-nitride gate dielectric; Dielectric constant; Dielectric thin films; Dielectrics and electrical insulation; Etching; MOSFET circuits; Oxidation; Plasma applications; Plasma chemistry; Plasma density; Plasma temperature;
Journal_Title :
Electron Device Letters, IEEE
