Title :
Submicron self-aligned HBT´s by selective emitter regrowth
Author :
Park, S.H. ; Chin, T.P. ; Liu, Q.Z. ; Fu, S.L. ; Nakamura, T. ; Yu, P.K.L. ; Asbeck, P.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
fDate :
4/1/1998 12:00:00 AM
Abstract :
Fabrication of fully self-aligned heterojunction bipolar transistors (HBTs) by selective emitter regrowth is described. Scaled devices with emitter dimensions as small as 0.4×7 μm2 demonstrate current gain up to 29, with successful suppression of surface recombination effects. The RF characteristics of a 1.4×11 μm2 device exhibited fT and fmax of 75 and 46 GHz, respectively, and is limited by the refractory base metallization. This technology is promising for scaled HBT applications where high-speed and low-power dissipation are critical.
Keywords :
UHF bipolar transistors; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device metallisation; semiconductor growth; surface recombination; vapour phase epitaxial growth; 0.4 micron; 1.4 micron; 46 GHz; 75 GHz; LP-MOVPE; current gain; emitter dimensions; high-speed devices; low-power dissipation; refractory base metallization; scaled HBT applications; selective emitter regrowth; self-aligned HBT; surface recombination effects; Circuits; Dry etching; Epitaxial growth; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Radio frequency; Substrates; Thermal management; Wet etching;
Journal_Title :
Electron Device Letters, IEEE
