Nonscaling of MOSFET´s linear resistance in the deep submicrometer regime

Author

Esseni, D. ; Iwai, H. ; Saito, M. ; Riccó, B.

Author_Institution

Dept. of Electron., Bologna Univ., Italy

Volume

19

Issue

4

fYear

1998

fDate

4/1/1998 12:00:00 AM

Firstpage

131

Lastpage

133

Abstract

This paper investigates the scaling properties of deep submicron MOSFET´s and shows that, while in a wide range of channel lengths they can be represented as composed by a scaling intrinsic and a nonscaling parasitic part, this picture does no longer hold for shorter transistors. A nonscaling of the total resistance R/sub TOT/=[V/sub DS//I/sub DS/] of short devices is observed, and its impact on parasitic resistances and effective channel length extraction is discussed. A possible explanation is suggested in relation to the two-dimensional substrate doping redistribution linked to reverse-short-channel effects.

Keywords

MOSFET; doping profiles; electric resistance; 2D substrate doping redistribution; MOSFET linear resistance; deep submicrometer regime; deep submicron MOSFETs; effective channel length extraction; parasitic resistances; reverse-short-channel effects; scaling properties; short channel devices; total resistance nonscaling; Conductivity; Doping; Electrical resistance measurement; Fabrication; Glass; Laboratories; Linear regression; MOSFET circuits; Microelectronics; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.663537

Filename

663537