DocumentCode
1347146
Title
Computer modeling of bistability effect in p-i-n diode limiter characteristic
Author
Drizdovski, N. ; Takano, Tadashi
Author_Institution
Dept. of Electr. & Comput. Eng., Villanova Univ., PA, USA
Volume
10
Issue
4
fYear
2000
fDate
4/1/2000 12:00:00 AM
Firstpage
148
Lastpage
150
Abstract
The bistability effect noted in p-i-n diode limiters has been studied using a computer simulation based on the one-dimensional drift-diffusion model (DDM). Computed results for silicon p-i-n diodes with different base width are shown. Frequency properties of the bistability effect were studied. Also the comparison between theoretical and experimental results is shown.
Keywords
UHF diodes; digital simulation; electronic engineering computing; microwave diodes; microwave limiters; p-i-n diodes; semiconductor device models; silicon; stability; 1D drift-diffusion model; Si; Si PIN diodes; base width variation; bistability effect; computer modeling; frequency properties; p-i-n diode limiter characteristic; Circuits; Computational modeling; Computer simulation; Distributed decision making; Impedance; P-i-n diodes; Poisson equations; Power generation; Radio frequency; Semiconductor diodes;
fLanguage
English
Journal_Title
Microwave and Guided Wave Letters, IEEE
Publisher
ieee
ISSN
1051-8207
Type
jour
DOI
10.1109/75.846928
Filename
846928
Link To Document