MOS charge pumps for low-voltage operation

Author

Wu, Jieh-Tsorng ; Chang, Kuen-Long

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

33

Issue

4

fYear

1998

fDate

4/1/1998 12:00:00 AM

Firstpage

592

Lastpage

597

Abstract

New MOS charge pumps utilizing the charge transfer switches (CTSs) to direct charge flow and generate boosted output voltage are described. Using the internal boosted voltage to backward control the CTS of a previous stage yields charge pumps that are suitable for low-voltage operation. Applying dynamic control to the CTSs can eliminate the reverse charge sharing phenomenon and further improve the voltage pumping gain. The limitation imposed by the diode-configured output stage can be mitigated by pumping it with a clock of enhanced voltage amplitude. Using the new circuit techniques, a 1.2-V-to-3.5-V charge pump and a 2-V-to-16-V charge pump are demonstrated

Keywords

MOS integrated circuits; coupled circuits; voltage multipliers; 1.2 to 3.5 V; 2 to 16 V; MOS charge pumps; boosted output voltage; charge flow; charge transfer switches; clock voltage amplitude; diode-configured output stage; dynamic control; low-voltage operation; voltage pumping gain; Charge pumps; Charge transfer; Circuits; Clocks; Diodes; Nonvolatile memory; Parasitic capacitance; Switches; Threshold voltage; Voltage control;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.663564

Filename

663564