Title :
A 3.3-V/5-V low power TTL-to-CMOS input buffer
Author :
Wang, Chi-Chang ; Wu, Jiin-Chuan
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
4/1/1998 12:00:00 AM
Abstract :
A separately self-biased transistor-transistor logic (TTL)-to-CMOS input buffer (SSIB) is proposed. Its logic threshold voltage is kept at 1.4 V when supply voltage is changed from 3.3 V to 5 V, making it suitable for 3.3-V/5-V dual voltage applications. It has low power dissipation, high operating speed, and a logic threshold voltage less sensitive to process and supply voltage variations. The proposed SSIB input buffer was realized in a 0.8-μm single-polysilicon double-metal (SPDM) CMOS technology, The measured logic threshold voltage variations due to process variations are ±24 mV for 5 V supply and ±16 mV for 3.3 V supply, respectively. Its logic threshold voltage variations due to supply voltage variation from 3.3 V to 5 V are within 10 mV. In ring oscillator configuration, the measured delay and power dissipation are 0.45 ns and 0.37 mW for 5-V supply and 0.51 ns and 0.14 mW for 3.3-V supply, respectively
Keywords :
CMOS logic circuits; buffer circuits; delays; logic gates; transistor-transistor logic; 0.14 mW; 0.37 mW; 0.45 ns; 0.51 ns; 0.8 micron; 3.3 V; 5 V; SSIB input buffer; TTL-to-CMOS input buffer; delay; dual voltage applications; logic threshold voltage; operating speed; power dissipation; ring oscillator configuration; self-biased circuit; single-polysilicon double-metal technology; CMOS logic circuits; CMOS technology; Inverters; MOS devices; Power dissipation; Power measurement; Ring oscillators; Threshold voltage; Very large scale integration; Voltage measurement;
Journal_Title :
Solid-State Circuits, IEEE Journal of