A 100-MHz CMOS wide-band IF amplifier

Author

Sjöland, Henrik ; Mattisson, Sven

Author_Institution

Dept. of Appl. Electron., Lund Univ., Sweden

Volume

33

Issue

4

fYear

1998

fDate

4/1/1998 12:00:00 AM

Firstpage

631

Lastpage

634

Abstract

When the data rates of communication systems increase, wideband IF amplifiers are needed. It is also possible to use a single wideband intermediate frequency (IF) amplifier for a radio band with several narrow-band channels of varying strengths. The linearity is then critical, if intermodulation products are not to disturb weak channels. We try to find a topology for this new amplifier application, suitable for integration in a standard CMOS process. To get low distortion, we use an output stage with high linearity, which is further linearized by feedback in a double-nested Miller configuration. A 0.8-μm standard CMOS IF amplifier design with low distortion up to 20 MHz is presented

Keywords

CMOS analogue integrated circuits; VHF amplifiers; feedback amplifiers; intermediate-frequency amplifiers; intermodulation distortion; wideband amplifiers; 0.8 micron; 100 MHz; CMOS wideband IF amplifier; data communication system; double-nested Miller topology; feedback; intermodulation distortion; linearity; Broadband amplifiers; CMOS process; Capacitors; Frequency; Linearity; Noise cancellation; Output feedback; Radiofrequency amplifiers; Topology; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.663569

Filename

663569