Potential and modeling of 1-μm SOI CMOS operational transconductance amplifiers for applications up to 1 GHz

The potential of 1-μm SOI complementary metal-oxide-semiconductor (CMOS) technology for the realization of operational transconductance amplifiers (OTAs) with transition frequencies in the gigahertz range is demonstrated. High-frequency device models, design guidelines and frequency limitations are detailed, as well as layout and technology improvements which can be used to boost the transconductance at high frequency and to reduce the source/drain-to-substrate capacitances. One-stage and folded-cascode OTA´s have been realized to validate the design methodology