Title :
A sophisticated analysis procedure for an MMIC phase shifter
Author_Institution :
Japan Radio Co. Ltd., Tokyo, Japan
fDate :
4/1/1998 12:00:00 AM
Abstract :
This paper describes a new analysis procedure for a highpass and lowpass (HP/LP) filter type MMIC phase shifter consisting of switching GaAs MESFETs. This paper reveals that a specially designed large signal model for a switching MESFET, described by a gate bias dependent equivalent circuit, is the key to realizing an accurate nonlinear simulation of the HP/LP filter type phase shifter. The new analysis procedure realizes a highly accurate phase shifter analysis for both linear and nonlinear simulations. A comparison between the analysis results and measurement results for the phase shifter shows excellent agreement
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC phase shifters; Schottky gate field effect transistors; equivalent circuits; field effect MMIC; field effect transistor switches; gallium arsenide; linear network analysis; microwave field effect transistors; nonlinear network analysis; semiconductor device models; GaAs; MMIC phase shifter; analysis procedure; gate bias dependent equivalent circuit; highpass/lowpass filter type; large signal model; linear simulation; nonlinear simulation; switching GaAs MESFETs; Analytical models; Circuit simulation; Equivalent circuits; Filters; Gallium arsenide; MESFETs; MMICs; Phase shifters; Signal design; Switching circuits;
Journal_Title :
Solid-State Circuits, IEEE Journal of
