A sophisticated analysis procedure for an MMIC phase shifter

Author

Fujii, Kohei

Author_Institution

Japan Radio Co. Ltd., Tokyo, Japan

Volume

33

Issue

4

fYear

1998

fDate

4/1/1998 12:00:00 AM

Firstpage

666

Lastpage

668

Abstract

This paper describes a new analysis procedure for a highpass and lowpass (HP/LP) filter type MMIC phase shifter consisting of switching GaAs MESFETs. This paper reveals that a specially designed large signal model for a switching MESFET, described by a gate bias dependent equivalent circuit, is the key to realizing an accurate nonlinear simulation of the HP/LP filter type phase shifter. The new analysis procedure realizes a highly accurate phase shifter analysis for both linear and nonlinear simulations. A comparison between the analysis results and measurement results for the phase shifter shows excellent agreement

Keywords

III-V semiconductors; MESFET integrated circuits; MMIC phase shifters; Schottky gate field effect transistors; equivalent circuits; field effect MMIC; field effect transistor switches; gallium arsenide; linear network analysis; microwave field effect transistors; nonlinear network analysis; semiconductor device models; GaAs; MMIC phase shifter; analysis procedure; gate bias dependent equivalent circuit; highpass/lowpass filter type; large signal model; linear simulation; nonlinear simulation; switching GaAs MESFETs; Analytical models; Circuit simulation; Equivalent circuits; Filters; Gallium arsenide; MESFETs; MMICs; Phase shifters; Signal design; Switching circuits;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.663577

Filename

663577