DocumentCode :
1347240
Title :
A transistorless-current-mode static RAM architecture
Author :
Levy, H.J. ; Daniel, E.S. ; McGill, T.C.
Author_Institution :
Thomas J. Watson Lab. of Appl. Phys., California Inst. of Technol., Pasadena, CA, USA
Volume :
33
Issue :
4
fYear :
1998
fDate :
4/1/1998 12:00:00 AM
Firstpage :
669
Lastpage :
672
Abstract :
We propose a static memory architecture in which each bit consists of a single two-terminal device that is bistable in current. Current-mode operation of the memory array removes the need for cell-isolation transistors, thus, allowing huge increases in density over inverter-based SRAM and capacitor-based DRAM. Low power consumption and fast read/write speeds are ensured by taking advantage of the exponential nature of the memory´s current-voltage characteristic
Keywords :
SRAM chips; memory architecture; tunnel diodes; SRAM architecture; current-mode operation; current-voltage characteristic; fast read/write speeds; low power consumption; static memory architecture; transistorless-current-mode configuration; tunnel switch diode; Circuits; Current-voltage characteristics; Energy consumption; Memory architecture; Microprocessors; Random access memory; Read-write memory; Silicon; Switches; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.663578
Filename :
663578
Link To Document :
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