Title :
A transistorless-current-mode static RAM architecture
Author :
Levy, H.J. ; Daniel, E.S. ; McGill, T.C.
Author_Institution :
Thomas J. Watson Lab. of Appl. Phys., California Inst. of Technol., Pasadena, CA, USA
fDate :
4/1/1998 12:00:00 AM
Abstract :
We propose a static memory architecture in which each bit consists of a single two-terminal device that is bistable in current. Current-mode operation of the memory array removes the need for cell-isolation transistors, thus, allowing huge increases in density over inverter-based SRAM and capacitor-based DRAM. Low power consumption and fast read/write speeds are ensured by taking advantage of the exponential nature of the memory´s current-voltage characteristic
Keywords :
SRAM chips; memory architecture; tunnel diodes; SRAM architecture; current-mode operation; current-voltage characteristic; fast read/write speeds; low power consumption; static memory architecture; transistorless-current-mode configuration; tunnel switch diode; Circuits; Current-voltage characteristics; Energy consumption; Memory architecture; Microprocessors; Random access memory; Read-write memory; Silicon; Switches; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of