Title :
24 Gbit/s regenerating demultiplexer IC in silicon bipolar technology
Author :
Hauenschild, J. ; Rein, H.M. ; McFarland, W. ; Pettengill, D.
Author_Institution :
Ruhr-Univ., Bochum, AG Halbleiterbauelemente, Germany
fDate :
3/14/1991 12:00:00 AM
Abstract :
A 1:2 regenerating demultiplexer IC has been realised in an advanced self-aligned silicon bipolar technology using 0.8 mu m lithography. The circuit can be operated up to 24 Gbit/s at 5 V supply voltage. This is by far the highest data rate reported for a demultiplexer in any IC technology.
Keywords :
bipolar integrated circuits; digital integrated circuits; elemental semiconductors; multiplexing equipment; optical communication equipment; silicon; 0.8 micron; 24 Gbit/s; 5 V; IC technology; Si bipolar technology; advanced self-aligned bipolar technology; data rate; demultiplexer; regenerating demultiplexer IC; semiconductors; supply voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910316
