DocumentCode
1348196
Title
24 Gbit/s regenerating demultiplexer IC in silicon bipolar technology
Author
Hauenschild, J. ; Rein, H.M. ; McFarland, W. ; Pettengill, D.
Author_Institution
Ruhr-Univ., Bochum, AG Halbleiterbauelemente, Germany
Volume
27
Issue
6
fYear
1991
fDate
3/14/1991 12:00:00 AM
Firstpage
502
Lastpage
504
Abstract
A 1:2 regenerating demultiplexer IC has been realised in an advanced self-aligned silicon bipolar technology using 0.8 mu m lithography. The circuit can be operated up to 24 Gbit/s at 5 V supply voltage. This is by far the highest data rate reported for a demultiplexer in any IC technology.
Keywords
bipolar integrated circuits; digital integrated circuits; elemental semiconductors; multiplexing equipment; optical communication equipment; silicon; 0.8 micron; 24 Gbit/s; 5 V; IC technology; Si bipolar technology; advanced self-aligned bipolar technology; data rate; demultiplexer; regenerating demultiplexer IC; semiconductors; supply voltage;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910316
Filename
84729
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