Design and performance of 20 dB gain two-tier matrix distributed amplifier

Author

D´Agostino, S. ; d´Inzeo, G. ; Marietti, P. ; Panariello, Gaetano

Author_Institution

Dept. of Electron., Rome Univ., Italy

Volume

27

Issue

6

fYear

1991

fDate

3/14/1991 12:00:00 AM

Firstpage

506

Lastpage

507

Abstract

A matrix distributed amplifier, having a gain of 20 dB with a noise figure of 5 dB in the frequency range between 0.5-12 GHz, is presented. The amplifier, realised in hybrid technology using commercially available GaAs HEMTs, incorporates a novel scheme which allows the biasing of a single stage of the two tier amplifier (two rows of active devices) with a unique controlling resistance and, at the same time, the cascading of the two FETs of each stage. The computed results obtained using a small signal model for each FET fit rather well with the measurements in the whole frequency range.

Keywords

III-V semiconductors; gallium arsenide; high electron mobility transistors; microwave amplifiers; semiconductor device models; solid-state microwave circuits; 0.5 to 12 GHz; 20 dB; 5 dB; GaAs; GaAs HEMTs; biasing; cascading of FETs; computed results; controlling resistance; design; frequency range; gain; hybrid technology; matrix distributed amplifier; measurements; noise figure; performance; semiconductors; small signal model; two rows of active devices; two tier amplifier;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19910318

Filename

84731