DocumentCode :
1348234
Title :
Gain compression and phase-amplitude coupling in GaInAs quantum well lasers with three, five and seven wells
Author :
Cavelier, M. ; Lourtioz, J.M. ; Xie, J.M. ; Chusseau, L. ; de Cremoux, B. ; Krawkowski, M. ; Rondi, D.
Author_Institution :
Inst. d´´Electron. Fondamental, CNRS, Univ. Paris-Sud, Orsay, France
Volume :
27
Issue :
6
fYear :
1991
fDate :
3/14/1991 12:00:00 AM
Firstpage :
513
Lastpage :
515
Abstract :
The gain compression and phase-amplitude coupling factors are measured along with the differential gain in GaInAs/GaInAsP quantum well lasers with three, five and seven wells. Results are compared with those obtained for a conventional bulk laser of the same quaternary material. The ultimate modulation bandwidth deduced from the measurements is shown to increase with the number of wells. For the seven well laser, the ultimate modulation bandwidth is found to reasonably approach that obtained for the bulk laser while the phase-amplitude coupling factor is 2.6 times smaller.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; semiconductor quantum wells; GaInAs-GaInAsP lasers; differential gain; five well lasers; gain compression factor; modulation bandwidth; number of wells; phase-amplitude coupling factor; quantum well lasers; semiconductors; seven well laser; three well lasers;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19910322
Filename :
84735
Link To Document :
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